BSF035NE2LQXUMA1

BSF035NE2LQXUMA1 Infineon Technologies


Infineon-BSF035NE2LQ-DS-v01_03-en-1731222.pdf Виробник: Infineon Technologies
MOSFET N-Ch 25V 69A CanPAK-2 SQ OptiMOS
на замовлення 4999 шт:

термін постачання 21-30 дні (днів)
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Технічний опис BSF035NE2LQXUMA1 Infineon Technologies

Description: MOSFET N-CH 25V 22A/69A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.2W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V.

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BSF035NE2LQXUMA1 BSF035NE2LQXUMA1 Виробник : INFINEON TECHNOLOGIES BSF035NE2LQ-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 69A
On-state resistance: 3.5mΩ
кількість в упаковці: 5000 шт
товар відсутній
BSF035NE2LQXUMA1 BSF035NE2LQXUMA1 Виробник : Infineon Technologies 3684bsf035ne2lq_rev1.3.pdffolderiddb3a304313b8b5a60113cee8763b02d7fil.pdf Trans MOSFET N-CH 25V 22A T/R
товар відсутній
BSF035NE2LQXUMA1 BSF035NE2LQXUMA1 Виробник : Infineon Technologies Infineon-BSF035NE2LQ-DS-v01_03-en.pdf?fileId=db3a30433f764301013f7fe8a925463c Description: MOSFET N-CH 25V 22A/69A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 12 V
товар відсутній
BSF035NE2LQXUMA1 BSF035NE2LQXUMA1 Виробник : INFINEON TECHNOLOGIES BSF035NE2LQ-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 69A; 28W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 69A
On-state resistance: 3.5mΩ
товар відсутній