BSF450NE7NH3XUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.61 грн |
| 10+ | 85.11 грн |
| 100+ | 67.71 грн |
| 500+ | 53.76 грн |
| 1000+ | 45.62 грн |
| 2000+ | 43.34 грн |
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Технічний опис BSF450NE7NH3XUMA1 Infineon Technologies
Description: MOSFET N-CH 75V 5A/15A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V, Power Dissipation (Max): 2.2W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 8µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V.
Інші пропозиції BSF450NE7NH3XUMA1 за ціною від 45.08 грн до 116.54 грн
| Фото | Назва | Виробник | Інформація |
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BSF450NE7NH3XUMA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 75V 15A CanPAK-2 SH |
на замовлення 1442 шт: термін постачання 21-30 дні (днів) |
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BSF450NE7NH3XUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W Mounting: SMD Drain-source voltage: 75V Drain current: 15A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ S; MG-WDSON-2 кількість в упаковці: 5000 шт |
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BSF450NE7NH3XUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 5A/15A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V Power Dissipation (Max): 2.2W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 8µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V |
товар відсутній |
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BSF450NE7NH3XUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W Mounting: SMD Drain-source voltage: 75V Drain current: 15A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 18W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ S; MG-WDSON-2 |
товар відсутній |