BSO080P03SHXUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 56.07 грн |
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Технічний опис BSO080P03SHXUMA1 Infineon Technologies
Description: INFINEON - BSO080P03SHXUMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 12.6 A, 0.0067 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 12.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 1.79W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0067ohm, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції BSO080P03SHXUMA1 за ціною від 53.34 грн до 123.99 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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BSO080P03SHXUMA1 | Виробник : INFINEON |
Description: INFINEON - BSO080P03SHXUMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 12.6 A, 0.0067 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.79W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (23-Jan-2024) |
на замовлення 2292 шт: термін постачання 21-31 дні (днів) |
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BSO080P03SHXUMA1 | Виробник : INFINEON |
Description: INFINEON - BSO080P03SHXUMA1 - Leistungs-MOSFET, p-Kanal, 30 V, 12.6 A, 0.0067 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 12.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.79W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0067ohm SVHC: No SVHC (23-Jan-2024) |
на замовлення 2292 шт: термін постачання 21-31 дні (днів) |
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BSO080P03SHXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 12.6A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
на замовлення 4212 шт: термін постачання 21-31 дні (днів) |
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BSO080P03SHXUMA1 | Виробник : Infineon Technologies | Trans MOSFET P-CH 30V 12.6A Automotive 8-Pin DSO T/R |
товар відсутній |
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BSO080P03SHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A Power dissipation: 1.79W Case: PG-DSO-8 Gate-source voltage: ±25V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSO080P03SHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A Power dissipation: 1.79W Case: PG-DSO-8 Gate-source voltage: ±25V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |