BSO203PHXUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 452+ | 44.29 грн |
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Технічний опис BSO203PHXUMA1 Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 100µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete.
Інші пропозиції BSO203PHXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BSO203PHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Power dissipation: 1.6W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: PG-DSO-8 Drain-source voltage: -20V Drain current: -7A On-state resistance: 21mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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BSO203PHXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2P-CH 20V 7A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
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BSO203PHXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2P-CH 20V 7A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
товар відсутній |
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BSO203PHXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Power dissipation: 1.6W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: PG-DSO-8 Drain-source voltage: -20V Drain current: -7A On-state resistance: 21mΩ Type of transistor: P-MOSFET |
товар відсутній |