Технічний опис BSP295-E6327 SIEMENS
Description: MOSFET N-CH 60V 1.8A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 400µA, Supplier Device Package: PG-SOT223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V.
Інші пропозиції BSP295-E6327
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Ціна без ПДВ |
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BSP295E6327 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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BSP295E6327 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 1.8A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 400µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V |
товар відсутній |
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BSP295 E6327 | Виробник : Infineon Technologies |
MOSFET |
товар відсутній |