на замовлення 3960 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.12 грн |
| 10+ | 78.88 грн |
| 100+ | 53.87 грн |
| 500+ | 44.48 грн |
| 1000+ | 35.09 грн |
| 2500+ | 32.83 грн |
| 5000+ | 31.1 грн |
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Технічний опис BSZ0703LSATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, FET Feature: Standard, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 20µA, Supplier Device Package: PG-TSDSON-8-26, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V.
Інші пропозиції BSZ0703LSATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSZ0703LSATMA1 | Виробник : Infineon Technologies |
 BSZ0703LSATMA1 |
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BSZ0703LSATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 20µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
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BSZ0703LSATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 20µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
товар відсутній |