BSZ076N06NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 20A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: PG-TSDSON-8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V.