Технічний опис BSZ0910NDXTMA1 Infineon Technologies
Description: DIFFERENTIATED MOSFETS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W (Ta), 31W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WISON-8, Part Status: Obsolete.
Інші пропозиції BSZ0910NDXTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BSZ0910NDXTMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 11.1A 8-Pin WISON EP T/R |
товар відсутній |
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BSZ0910NDXTMA1 | Виробник : Infineon Technologies |
Description: DIFFERENTIATED MOSFETS Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WISON-8 Part Status: Obsolete |
товар відсутній |
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BSZ0910NDXTMA1 | Виробник : Infineon Technologies |
Description: DIFFERENTIATED MOSFETS Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WISON-8 Part Status: Obsolete |
товар відсутній |