BSZ215CHXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 38.66 грн |
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Технічний опис BSZ215CHXTMA1 Infineon Technologies
Description: MOSFET N/P-CH 20V 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A, Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.4V @ 110µA, Supplier Device Package: PG-TSDSON-8, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції BSZ215CHXTMA1 за ціною від 35.96 грн до 101 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BSZ215CHXTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N/P-CH 20V 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.4V @ 110µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6605 шт: термін постачання 21-31 дні (днів) |
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BSZ215CHXTMA1 | Виробник : Infineon Technologies | MOSFET SMALL SIGNAL+P-CH |
на замовлення 3014 шт: термін постачання 21-30 дні (днів) |
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