BTS244ZNKSA1

BTS244ZNKSA1 Infineon Technologies


bts244z.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 55V 35A Automotive 5-Pin(5+Tab) TO-220AB Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис BTS244ZNKSA1 Infineon Technologies

Description: MOSFET N-CH 55V 35A TO220-5-3, Packaging: Tube, Package / Case: TO-220-5 Formed Leads, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V, FET Feature: Temperature Sensing Diode, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TO220-5-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V.

Інші пропозиції BTS244ZNKSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BTS244ZNKSA1 BTS244ZNKSA1 Виробник : Infineon Technologies BTS244Z.pdf Description: MOSFET N-CH 55V 35A TO220-5-3
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO220-5-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
товар відсутній