BXT1150N10D BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 64A
Power dissipation: 78W
Mounting: SMD
Case: TO252
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 64A
Power dissipation: 78W
Mounting: SMD
Case: TO252
кількість в упаковці: 5 шт
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Технічний опис BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Drain-source voltage: 100V, Drain current: 12.8A, On-state resistance: 135mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 21nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 64A, Power dissipation: 78W, Mounting: SMD, Case: TO252, кількість в упаковці: 5 шт.
Інші пропозиції BXT1150N10D
Фото | Назва | Виробник | Інформація |
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BXT1150N10D | Виробник : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Drain-source voltage: 100V Drain current: 12.8A On-state resistance: 135mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 64A Power dissipation: 78W Mounting: SMD Case: TO252 |
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