Технічний опис BYC8B-600PQP NXP Semiconductors
Description: DIODE GEN PURP 600V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 18 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 600 V.
Інші пропозиції BYC8B-600PQP
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BYC8B-600PQP | Виробник : NXP USA Inc. |
Description: DIODE GEN PURP 600V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
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BYC8B-600PQP | Виробник : NXP Semiconductors |
 Rectifiers Hyperfast pwr diode |
товар відсутній |