Технічний опис BYV29B-600,118 Ween
Description: DIODE GEN PURP 600V 9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Current - Average Rectified (Io): 9A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції BYV29B-600,118
| Фото | Назва | Виробник | Інформація |
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BYV29B-600,118 | Виробник : NXP Semiconductors |
 Rectifier Diode Switching 600V 9A 60ns 3-Pin(2+Tab) D2PAK T/R |
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BYV29B-600,118 | Виробник : WeEn Semiconductor(Hong Kong)Co.,Limited |
Rectifier Diode Switching 600V 9A 60ns 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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BYV29B-600,118 | Виробник : WeEn Semiconductor(Hong Kong)Co.,Limited |
Rectifier Diode Switching 600V 9A 60ns 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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BYV29B-600,118 | Виробник : WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 77A Case: D2PAK; SOT404 Max. forward voltage: 1.45V Reverse recovery time: 60ns кількість в упаковці: 1 шт |
товар відсутній |
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BYV29B-600,118 | Виробник : WeEn Semiconductors |
Description: DIODE GEN PURP 600V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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BYV29B-600,118 | Виробник : WeEn Semiconductors |
Rectifiers EPI |
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BYV29B-600,118 | Виробник : WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 9A; 60ns; D2PAK,SOT404; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 77A Case: D2PAK; SOT404 Max. forward voltage: 1.45V Reverse recovery time: 60ns |
товар відсутній |