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C3M0045065J1-TR

C3M0045065J1-TR Wolfspeed

Виробник: Wolfspeed
MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, T&R, Industrial, Gen 3
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1424.57 грн
10+ 1237.62 грн
25+ 1046.82 грн
50+ 988.73 грн
100+ 930.65 грн
250+ 901.28 грн
500+ 843.2 грн
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Технічний опис C3M0045065J1-TR Wolfspeed

Description: SIC, MOSFET 45M, 650V TO-263-7XL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 4.84mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V.

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C3M0045065J1-TR Виробник : Wolfspeed c3m0045065j1.pdf Trans MOSFET N-CH SiC 650V 47A 8-Pin(7+Tab) TO-263 T/R
товар відсутній
C3M0045065J1-TR C3M0045065J1-TR Виробник : Wolfspeed, Inc. Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товар відсутній
C3M0045065J1-TR C3M0045065J1-TR Виробник : Wolfspeed, Inc. Description: SIC, MOSFET 45M, 650V TO-263-7XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1621 pF @ 400 V
товар відсутній