C3M0065090J-TR Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Description: SICFET N-CH 900V 35A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
800+ | 908.25 грн |
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Технічний опис C3M0065090J-TR Wolfspeed, Inc.
Description: SICFET N-CH 900V 35A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V.
Інші пропозиції C3M0065090J-TR за ціною від 708 грн до 1428.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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C3M0065090J-TR | Виробник : Wolfspeed, Inc. |
Description: SICFET N-CH 900V 35A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V |
на замовлення 2211 шт: термін постачання 21-31 дні (днів) |
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C3M0065090J-TR | Виробник : Wolfspeed | MOSFET G3 SiC MOSFET 900V, 65mOhm |
на замовлення 2709 шт: термін постачання 21-30 дні (днів) |
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C3M0065090J-TR | Виробник : Wolfspeed | Trans MOSFET N-CH SiC 900V 35A Automotive 8-Pin(7+Tab) D2PAK T/R |
на замовлення 2293 шт: термін постачання 21-31 дні (днів) |
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C3M0065090J-TR | Виробник : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET кількість в упаковці: 800 шт |
товар відсутній |
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C3M0065090J-TR | Виробник : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns Power dissipation: 113W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 30.4nC Technology: C3M™; SiC Kind of channel: enhanced Gate-source voltage: -8...19V Mounting: SMD Case: D2PAK-7 Reverse recovery time: 16ns Drain-source voltage: 900V Drain current: 35A On-state resistance: 78mΩ Type of transistor: N-MOSFET |
товар відсутній |