Продукція > CENTRAL SEMICONDUCTOR CORP > CEDM8001 TR PBFREE
CEDM8001 TR PBFREE

CEDM8001 TR PBFREE Central Semiconductor Corp

CEDM8001.PDF Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 20V 100MA SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 3 V
на замовлення 7740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+37.87 грн
10+ 30.69 грн
100+ 22.95 грн
500+ 16.93 грн
1000+ 13.08 грн
2000+ 11.93 грн
Мінімальне замовлення: 8
Відгуки про товар
Написати відгук

Технічний опис CEDM8001 TR PBFREE Central Semiconductor Corp

Description: MOSFET P-CH 20V 100MA SOT883, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-883, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): 10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.66 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 3 V.

Інші пропозиції CEDM8001 TR PBFREE

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
CEDM8001 TR PBFREE CEDM8001 TR PBFREE Виробник : Central Semiconductor Corp CEDM8001.PDF Description: MOSFET P-CH 20V 100MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 3 V
товар відсутній