CIG21W4R7MNE SAMSUNGEM
Виробник: SAMSUNGEMInductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 0.65A 0.3Ohm DCR 0805 T/R
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Технічний опис CIG21W4R7MNE SAMSUNGEM
Description: FIXED IND 4.7UH 650MA 300MOHM SM, Tolerance: ±20%, Packaging: Tape & Reel (TR), Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Multilayer, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 300mOhm, Inductance Frequency - Test: 1 MHz, Inductance: 4.7 µH, Current Rating (Amps): 650 mA.
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CIG21W4R7MNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 4.7UH 650MA 300MOHM SM Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 300mOhm Inductance Frequency - Test: 1 MHz Inductance: 4.7 µH Current Rating (Amps): 650 mA |
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CIG21W4R7MNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 4.7UH 650MA 300MOHM SM Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 300mOhm Inductance Frequency - Test: 1 MHz Inductance: 4.7 µH Current Rating (Amps): 650 mA |
товар відсутній |