CSD13380F3T Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET N-CH 12V 3.6A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 24.4 грн |
| 500+ | 20.35 грн |
| 1250+ | 19.06 грн |
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Технічний опис CSD13380F3T Texas Instruments
Description: MOSFET N-CH 12V 3.6A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V.
Інші пропозиції CSD13380F3T за ціною від 19.55 грн до 60.02 грн
| Фото | Назва | Виробник | Інформація |
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CSD13380F3T | Виробник : Texas Instruments |
MOSFET 12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
на замовлення 64889 шт: термін постачання 21-30 дні (днів) |
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CSD13380F3T | Виробник : Texas Instruments |
Description: MOSFET N-CH 12V 3.6A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V |
на замовлення 29138 шт: термін постачання 21-31 дні (днів) |
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| CSD13380F3T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.6A; Idm: 13.5A; 1.4W Kind of package: reel; tape On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Drain current: 3.6A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 13.5A Case: PICOSTAR3 Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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| CSD13380F3T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.6A; Idm: 13.5A; 1.4W Kind of package: reel; tape On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Drain current: 3.6A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 13.5A Case: PICOSTAR3 Mounting: SMD |
товар відсутній |