Технічний опис CSD16323Q3C Texas Instruments
Description: MOSFET N-CH 25V 21A/60A 8SON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SON-EP (3x3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V.
Інші пропозиції CSD16323Q3C
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CSD16323Q3C | Виробник : Texas Instruments |
 Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R |
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CSD16323Q3C | Виробник : Texas Instruments |
Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R |
товар відсутній |
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CSD16323Q3C | Виробник : Texas Instruments |
Description: MOSFET N-CH 25V 21A/60A 8SON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SON-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V |
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CSD16323Q3C | Виробник : Texas Instruments |
Description: MOSFET N-CH 25V 21A/60A 8SON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SON-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V |
товар відсутній |