CSD17556Q5BT Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET N-CH 30V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 191W (Tc)
Vgs(th) (Max) @ Id: 1.65V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 15 V
на замовлення 10250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 145.09 грн |
| 500+ | 122.25 грн |
| 1250+ | 101.3 грн |
| 2500+ | 88.51 грн |
| 6250+ | 85.23 грн |
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Технічний опис CSD17556Q5BT Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V, Power Dissipation (Max): 3.1W (Ta), 191W (Tc), Vgs(th) (Max) @ Id: 1.65V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 15 V.
Інші пропозиції CSD17556Q5BT за ціною від 82.56 грн до 214.35 грн
| Фото | Назва | Виробник | Інформація |
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CSD17556Q5BT | Виробник : Texas Instruments |
MOSFET 30V N-Ch NexFET Pwr MOSFET |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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CSD17556Q5BT | Виробник : Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta), 191W (Tc) Vgs(th) (Max) @ Id: 1.65V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 15 V |
на замовлення 10442 шт: термін постачання 21-31 дні (днів) |
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CSD17556Q5BT | Виробник : Texas Instruments |
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R |
товар відсутній |
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| CSD17556Q5BT | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 191W Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 191W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| CSD17556Q5BT | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 191W Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 191W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |