Технічний опис D850N30TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 3KV 850A, Packaging: Bulk, Package / Case: DO-200AB, B-PUK, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 850A, Operating Temperature - Junction: -40°C ~ 160°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 3000 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A, Current - Reverse Leakage @ Vr: 50 mA @ 3000 V.
Інші пропозиції D850N30TXPSA1
| Фото | Назва | Виробник | Інформація |
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D850N30TXPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 3KV 850APackaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 850A Operating Temperature - Junction: -40°C ~ 160°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 3000 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A Current - Reverse Leakage @ Vr: 50 mA @ 3000 V |
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