DDB6U100N16RRBOSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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Технічний опис DDB6U100N16RRBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 50A 350W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Інші пропозиції DDB6U100N16RRBOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DDB6U100N16RRBOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.6kV; 350W Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; three-phase diode bridge Max. off-state voltage: 1.6kV Collector current: 100A Case: AG-ECONO2-3 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 550A Power dissipation: 350W Technology: EconoBRIDGE™ Mechanical mounting: screw |
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