Технічний опис DF200R12W1H3B27BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 30A 375W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 375 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Інші пропозиції DF200R12W1H3B27BOMA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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DF200R12W1H3B27BOMA1 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 50A 375W 11-Pin EASY1B-2 Tray |
товар відсутній |
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DF200R12W1H3B27BOMA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 30A 375W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 375 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
товар відсутній |