Технічний опис DI005N06SQ2 Diotec Semiconductor
Description: MOSFET, SO-8, 60V, 5A, 150C, 0, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DI005N06SQ2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DI005N06SQ2 | Виробник : Diotec Semiconductor |
Description: MOSFET, SO-8, 60V, 5A, 150C, 0 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
товар відсутній |