DI035N10PT-AQ Diotec Semiconductor
на замовлення 4666 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.19 грн |
| 10+ | 50.52 грн |
| 100+ | 26.3 грн |
| 500+ | 26.04 грн |
| 1000+ | 25.24 грн |
| 2500+ | 22.3 грн |
| 5000+ | 20.96 грн |
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Технічний опис DI035N10PT-AQ Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 100V 35A 0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DI035N10PT-AQ за ціною від 13.86 грн до 13.86 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| DI035N10PT-AQ | Виробник : Diotec Semiconductor |
 MOSFET, PowerQFN 3x3, 100V, 35A, 0, 25W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DI035N10PT-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 130A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 5000 шт |
товар відсутній |
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DI035N10PT-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Qualification: AEC-Q101 |
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DI035N10PT-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 100V 35A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Qualification: AEC-Q101 |
товар відсутній |
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| DI035N10PT-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 130A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |