DI040P04D1-AQ Diotec Semiconductor


di040p04d1.pdf Виробник: Diotec Semiconductor
DI040P04D1-AQ
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Технічний опис DI040P04D1-AQ Diotec Semiconductor

Description: MOSFET DPAK P -40V -40A 0.015? 1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V, Qualification: AEC-Q101.

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DI040P04D1-AQ Виробник : DIOTEC SEMICONDUCTOR di040p04d1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
DI040P04D1-AQ DI040P04D1-AQ Виробник : Diotec Semiconductor di040p04d1.pdf Description: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI040P04D1-AQ DI040P04D1-AQ Виробник : Diotec Semiconductor di040p04d1.pdf Description: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
DI040P04D1-AQ DI040P04D1-AQ Виробник : Diotec Semiconductor di040p04d1.pdf MOSFET MOSFET, DPAK, -40V, -40A, 150C, P, AEC-Q101
товар відсутній
DI040P04D1-AQ Виробник : DIOTEC SEMICONDUCTOR di040p04d1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -160A; 52W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -160A
Power dissipation: 52W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній