DI080N06PQ-AQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET POWERQFN 5X6 N 65V 105A 0
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1250+ | 265.48 грн |
| 2500+ | 199.7 грн |
| 5000+ | 135.79 грн |
| 10000+ | 126.51 грн |
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Технічний опис DI080N06PQ-AQ Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 N 65V 105A 0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DI080N06PQ-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DI080N06PQ-AQ | Виробник : Diotec Semiconductor |
N-Channel Power MOSFET AEC-Q |
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DI080N06PQ-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 80A Pulsed drain current: 480A Power dissipation: 65.8W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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DI080N06PQ-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 |
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DI080N06PQ-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 |
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DI080N06PQ-AQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N, AEC-Q101 |
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DI080N06PQ-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 80A; Idm: 480A; 65.8W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 80A Pulsed drain current: 480A Power dissipation: 65.8W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 78.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |