Технічний опис DI5A7N65D1K Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Supplier Device Package: TO-252 (DPAK), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V.
Інші пропозиції DI5A7N65D1K
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DI5A7N65D1K | Виробник : DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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| DI5A7N65D1K | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V |
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DI5A7N65D1K | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |