Технічний опис DMP1005UFDF-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W, Polarisation: unipolar, Mounting: SMD, Drain-source voltage: -12V, Drain current: -10.3A, On-state resistance: 18.5mΩ, Type of transistor: P-MOSFET, Power dissipation: 2.1W, Kind of package: reel; tape, Gate charge: 47nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: -70A, Case: U-DFN2020-6, кількість в упаковці: 10000 шт.
Інші пропозиції DMP1005UFDF-13
| Фото | Назва | Виробник | Інформація |
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| DMP1005UFDF-13 | Виробник : DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
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DMP1005UFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 12V 26A 6UDFN |
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DMP1005UFDF-13 | Виробник : Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
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| DMP1005UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10.3A; Idm: -70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -10.3A On-state resistance: 18.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -70A Case: U-DFN2020-6 |
товар відсутній |