DMP1011LFV-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
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Технічний опис DMP1011LFV-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W, Mounting: SMD, Power dissipation: 2.16W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 9.5nC, Kind of channel: enhanced, Gate-source voltage: ±6V, Pulsed drain current: -70A, Case: PowerDI3333-8, Drain-source voltage: -12V, Drain current: -10A, On-state resistance: 18.6mΩ, Type of transistor: P-MOSFET, кількість в упаковці: 3000 шт.
Інші пропозиції DMP1011LFV-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP1011LFV-13 | Виробник : Diodes Incorporated | Description: MOSFET P-CH 12V 19A POWERDI3333 |
товар відсутній |
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DMP1011LFV-13 | Виробник : Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V |
товар відсутній |
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DMP1011LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Mounting: SMD Power dissipation: 2.16W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -70A Case: PowerDI3333-8 Drain-source voltage: -12V Drain current: -10A On-state resistance: 18.6mΩ Type of transistor: P-MOSFET |
товар відсутній |