DMP1012UCB9-7 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Mounting: SMD
Power dissipation: 1.57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -50A
Case: U-WLB1515-9
Drain-source voltage: -8V
Drain current: -6A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
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Технічний опис DMP1012UCB9-7 DIODES INCORPORATED
Description: MOSFET P-CH 8V 10A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V, Power Dissipation (Max): 890mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V.
Інші пропозиції DMP1012UCB9-7
| Фото | Назва | Виробник | Інформація |
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DMP1012UCB9-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 8V 10A U-WLB1515-9 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
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DMP1012UCB9-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET |
товар відсутній |
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| DMP1012UCB9-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Mounting: SMD Power dissipation: 1.57W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -50A Case: U-WLB1515-9 Drain-source voltage: -8V Drain current: -6A On-state resistance: 14mΩ Type of transistor: P-MOSFET |
товар відсутній |