на замовлення 2799 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.31 грн |
| 10+ | 41.02 грн |
| 100+ | 24.7 грн |
| 500+ | 20.61 грн |
| 1000+ | 17.57 грн |
| 3000+ | 15.59 грн |
| 6000+ | 15.52 грн |
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Технічний опис DMP1022UFDEQ-7 Diodes Incorporated
Description: MOSFET P-CH 12V 9.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V, Qualification: AEC-Q101.
Інші пропозиції DMP1022UFDEQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMP1022UFDEQ-7 | Виробник : Diodes Inc |
 Trans MOSFET P-CH 12V 9.1A Automotive 6-Pin UDFN EP T/R |
товар відсутній |
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| DMP1022UFDEQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -9A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42.6nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 3000 шт |
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DMP1022UFDEQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 12V 9.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V Qualification: AEC-Q101 |
товар відсутній |
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DMP1022UFDEQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 12V 9.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V Qualification: AEC-Q101 |
товар відсутній |
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| DMP1022UFDEQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -9A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42.6nC Kind of channel: enhanced Gate-source voltage: ±8V |
товар відсутній |