DMP1022UFDF-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 12V 9.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
на замовлення 170000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 11.13 грн |
| 30000+ | 10.47 грн |
| 50000+ | 10.2 грн |
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Технічний опис DMP1022UFDF-13 Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V.
Інші пропозиції DMP1022UFDF-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMP1022UFDF-13 | Виробник : Diodes Inc |
Trans MOSFET P-CH 12V 9.5A 6-Pin UDFN EP T/R |
товар відсутній |
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| DMP1022UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 10000 шт |
товар відсутній |
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DMP1022UFDF-13 | Виробник : Diodes Incorporated |
MOSFET 12V P-Ch Enh Mode 8Vgss 2712pF 28.6nC |
товар відсутній |
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| DMP1022UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V |
товар відсутній |