DMP1022UWS-7 Diodes Incorporated


DMP1022UWS.pdf Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 7.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN3020-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис DMP1022UWS-7 Diodes Incorporated

Description: MOSFET P-CH 12V 7.2A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: V-DFN3020-8, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V.

Інші пропозиції DMP1022UWS-7

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
DMP1022UWS-7 DMP1022UWS-7 Виробник : Diodes Incorporated DIOD_S_A0005815006_1-2542743.pdf MOSFET MOSFET BVDSS: 8V-24V
товар відсутній