DMP1045UCB4-7 Diodes Incorporated


DMP1045UCB4.pdf Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 2.6A X2-WLB0808
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Power Dissipation (Max): 530mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0808-4 (Type C)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 6 V
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Технічний опис DMP1045UCB4-7 Diodes Incorporated

Description: MOSFET P-CH 12V 2.6A X2-WLB0808, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V, Power Dissipation (Max): 530mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-WLB0808-4 (Type C), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 6 V.

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DMP1045UCB4-7 DMP1045UCB4-7 Виробник : Diodes Incorporated DIOD_S_A0009645177_1-2543284.pdf MOSFET MOSFET BVDSS: 8V~24V X2-WLB0808-4 T&R 3K
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