DMP1055USW-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
кількість в упаковці: 10000 шт
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Технічний опис DMP1055USW-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363, Case: SOT363, Mounting: SMD, Kind of package: reel; tape, Drain current: -3A, On-state resistance: 0.15Ω, Type of transistor: P-MOSFET, Power dissipation: 1.03W, Polarisation: unipolar, Gate charge: 20.8nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: -20A, Drain-source voltage: -12V, кількість в упаковці: 10000 шт.
Інші пропозиції DMP1055USW-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP1055USW-13 | Виробник : Diodes Incorporated | Description: MOSFET P-CH 12V 3.8A SOT363 |
товар відсутній |
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DMP1055USW-13 | Виробник : Diodes Incorporated | MOSFET Dual P-Ch Enh FET Vdss -12V 8Vgss |
товар відсутній |
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DMP1055USW-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V |
товар відсутній |