DMP10H400SEQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 2.3A/6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 13.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V
Description: MOSFET P-CH 100V 2.3A/6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 13.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V
на замовлення 432500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 17.64 грн |
5000+ | 16.09 грн |
12500+ | 14.9 грн |
25000+ | 13.85 грн |
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Технічний опис DMP10H400SEQ-13 Diodes Incorporated
Description: MOSFET P-CH 100V 2.3A/6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 13.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V.
Інші пропозиції DMP10H400SEQ-13 за ціною від 17.9 грн до 46.94 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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DMP10H400SEQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 100V 2.3A/6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 13.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V |
на замовлення 434181 шт: термін постачання 21-31 дні (днів) |
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DMP10H400SEQ-13 | Виробник : Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A |
на замовлення 3880 шт: термін постачання 21-30 дні (днів) |
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DMP10H400SEQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V кількість в упаковці: 1 шт |
товар відсутній |
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DMP10H400SEQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V |
товар відсутній |