DMP1245UFCL-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 12V 6.6A X1-DFN1616
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V
Power Dissipation (Max): 613mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.96 грн |
| 6000+ | 13.64 грн |
| 9000+ | 12.63 грн |
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Технічний опис DMP1245UFCL-7 Diodes Incorporated
Description: MOSFET P-CH 12V 6.6A X1-DFN1616, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V, Power Dissipation (Max): 613mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X1-DFN1616-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V.
Інші пропозиції DMP1245UFCL-7 за ціною від 13.8 грн до 42.31 грн
| Фото | Назва | Виробник | Інформація |
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DMP1245UFCL-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 12V 6.6A X1-DFN1616 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V Power Dissipation (Max): 613mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V |
на замовлення 12713 шт: термін постачання 21-31 дні (днів) |
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DMP1245UFCL-7 | Виробник : Diodes Incorporated |
MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF |
на замовлення 3675 шт: термін постачання 21-30 дні (днів) |
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| DMP1245UFCL-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 1.7W Kind of package: reel; tape Case: X1-DFN1616-6 Mounting: SMD Gate charge: 26.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16.67A Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω кількість в упаковці: 1 шт |
товар відсутній |
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| DMP1245UFCL-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 1.7W Kind of package: reel; tape Case: X1-DFN1616-6 Mounting: SMD Gate charge: 26.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16.67A Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω |
товар відсутній |