DMP2021UFDE-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 10.81 грн |
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Технічний опис DMP2021UFDE-13 Diodes Incorporated
Description: MOSFET P-CH 20V 11.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V.
Інші пропозиції DMP2021UFDE-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMP2021UFDE-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8.9A Pulsed drain current: -60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
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DMP2021UFDE-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K |
товар відсутній |
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| DMP2021UFDE-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8.9A Pulsed drain current: -60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |