DMP2021UFDF-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8.9A
Pulsed drain current: -60A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
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Технічний опис DMP2021UFDF-13 DIODES INCORPORATED
Description: MOSFET P-CH 20V 9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V.
Інші пропозиції DMP2021UFDF-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP2021UFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
товар відсутній |
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DMP2021UFDF-13 | Виробник : Diodes Incorporated |
MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF |
товар відсутній |
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| DMP2021UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8.9A Pulsed drain current: -60A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |