Технічний опис DMP2033UVT-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.4A, Pulsed drain current: -10A, Power dissipation: 1.7W, Case: TSOT26, Gate-source voltage: ±8V, On-state resistance: 0.2Ω, Mounting: SMD, Gate charge: 10.4nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 10000 шт.
Інші пропозиції DMP2033UVT-13
| Фото | Назва | Виробник | Інформація |
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DMP2033UVT-13 | Виробник : DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Pulsed drain current: -10A Power dissipation: 1.7W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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DMP2033UVT-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A TSOT-26 |
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DMP2033UVT-13 | Виробник : Diodes Incorporated |
MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC |
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DMP2033UVT-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Pulsed drain current: -10A Power dissipation: 1.7W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |