на замовлення 9895 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.83 грн |
| 12+ | 27.42 грн |
| 100+ | 13.28 грн |
| 1000+ | 8.32 грн |
| 2500+ | 7.99 грн |
| 10000+ | 7.13 грн |
| 20000+ | 7 грн |
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Технічний опис DMP2035UVTQ-13 Diodes Incorporated
Description: MOSFET P-CH 20V 7.2A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMP2035UVTQ-13
| Фото | Назва | Виробник | Інформація |
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DMP2035UVTQ-13 | Виробник : Diodes Zetex |
 Trans MOSFET P-CH 20V 6A Automotive AEC-Q101 6-Pin TSOT-26 T/R |
товар відсутній |
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DMP2035UVTQ-13 | Виробник : Diodes Inc |
Trans MOSFET P-CH 20V 6A Automotive 6-Pin TSOT-26 T/R |
товар відсутній |
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DMP2035UVTQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
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DMP2035UVTQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Qualification: AEC-Q101 |
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DMP2035UVTQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 7.2A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Qualification: AEC-Q101 |
товар відсутній |
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DMP2035UVTQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |