Технічний опис DMP2042UCB4-7 Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W, Mounting: SMD, Case: U-WLB1010-4, Kind of package: reel; tape, Pulsed drain current: -16A, Drain-source voltage: -20V, Drain current: -3.7A, On-state resistance: 65mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.4W, Polarisation: unipolar, Gate charge: 2.5nC, Kind of channel: enhanced, Gate-source voltage: ±6V, кількість в упаковці: 3000 шт.
Інші пропозиції DMP2042UCB4-7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMP2042UCB4-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±6V кількість в упаковці: 3000 шт |
товар відсутній |
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DMP2042UCB4-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 65mΩ Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±6V |
товар відсутній |