на замовлення 9958 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.34 грн |
| 14+ | 22.8 грн |
| 100+ | 8.21 грн |
| 1000+ | 5.14 грн |
| 2500+ | 4.87 грн |
| 10000+ | 4.14 грн |
| 20000+ | 3.94 грн |
Відгуки про товар
Написати відгук
Технічний опис DMP2045U-13 Diodes Incorporated
Description: MOSFET P-CH 20V 4.3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V.
Інші пропозиції DMP2045U-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMP2045U-13 | Виробник : Diodes Inc |
 Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R |
товар відсутній |
|
 |
DMP2045U-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET кількість в упаковці: 10000 шт |
товар відсутній |
|
 |
DMP2045U-13 | Виробник : Diodes Zetex |
Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R |
товар відсутній |
|
 |
DMP2045U-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V |
товар відсутній |
|
|
|
DMP2045U-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V |
товар відсутній |
|
|
|
DMP2045U-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Case: SOT23 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 90mΩ Type of transistor: P-MOSFET |
товар відсутній |