DMP2066LDMQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
на замовлення 3171000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.39 грн |
6000+ | 8.58 грн |
9000+ | 7.97 грн |
30000+ | 7.3 грн |
75000+ | 7.12 грн |
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Технічний опис DMP2066LDMQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-26, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.
Інші пропозиції DMP2066LDMQ-7 за ціною від 8.41 грн до 30.45 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMP2066LDMQ-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DMP2066LDMQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Case: SOT26 Gate charge: 10.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 70mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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DMP2066LDMQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Case: SOT26 Gate charge: 10.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A On-state resistance: 70mΩ Type of transistor: P-MOSFET |
товар відсутній |