Технічний опис DMT10H025LSS-13 Diodes Inc
Description: MOSFET BVDSS: 61V~100V SO-8 T&R, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V.
Інші пропозиції DMT10H025LSS-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMT10H025LSS-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 5.7A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 2500 шт |
товар відсутній |
|
 |
DMT10H025LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V SO-8 T&R Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V |
товар відсутній |
|
 |
DMT10H025LSS-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V SO-8 T&R 2.5K |
товар відсутній |
|
|
|
DMT10H025LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; Idm: 60A; 1.9W; SO8 Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 5.7A Power dissipation: 1.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.9nC Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
товар відсутній |