DMT10H9M9SH3 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V TO251 TUB, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V.