DMT12H007LPS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 120V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V
Description: MOSFET N-CH 120V 90A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.9W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 48.84 грн |
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Технічний опис DMT12H007LPS-13 Diodes Incorporated
Description: MOSFET N-CH 120V 90A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V, Power Dissipation (Max): 2.9W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V.
Інші пропозиції DMT12H007LPS-13 за ціною від 39.62 грн до 118.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMT12H007LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 120V 90A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V Power Dissipation (Max): 2.9W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V |
на замовлення 7483 шт: термін постачання 21-31 дні (днів) |
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DMT12H007LPS-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 101V~250V PowerDI5060-8 T&R 2.5K |
на замовлення 20374 шт: термін постачання 21-30 дні (днів) |
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DMT12H007LPS-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 120V 90A 8-Pin PowerDI EP T/R |
товар відсутній |
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DMT12H007LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.9W Drain-source voltage: 120V Drain current: 72A On-state resistance: 14.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A кількість в упаковці: 2500 шт |
товар відсутній |
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DMT12H007LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 360A; 2.9W Mounting: SMD Kind of package: reel; tape Case: PowerDI5060-8 Power dissipation: 2.9W Drain-source voltage: 120V Drain current: 72A On-state resistance: 14.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 360A |
товар відсутній |