DMT3003LFG-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
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Технічний опис DMT3003LFG-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W, Mounting: SMD, Power dissipation: 2.4W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 44nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 100A, Case: PowerDI3333-8, Drain-source voltage: 30V, Drain current: 18A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 3000 шт.
Інші пропозиції DMT3003LFG-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMT3003LFG-13 | Виробник : Diodes Incorporated | Description: MOSFET NCH 30V 22A POWERDI |
товар відсутній |
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DMT3003LFG-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V |
товар відсутній |
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DMT3003LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET |
товар відсутній |