DMT3006LFV-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.65 грн |
6000+ | 16.1 грн |
9000+ | 14.91 грн |
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Технічний опис DMT3006LFV-13 Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V.
Інші пропозиції DMT3006LFV-13 за ціною від 15.37 грн до 49.63 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMT3006LFV-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
на замовлення 11940 шт: термін постачання 21-31 дні (днів) |
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DMT3006LFV-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V |
на замовлення 2700 шт: термін постачання 21-30 дні (днів) |
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DMT3006LFV-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 30V 60A 8-Pin PowerDI EP T/R |
товар відсутній |
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DMT3006LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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DMT3006LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET |
товар відсутній |